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Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut

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Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut
Characteristics and techniques of GaN-based micro-LEDs for application in  next-generation display

Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display

The process flow of NP-GaN embedded with QD Micro-LED device.

The process flow of NP-GaN embedded with QD Micro-LED device.

Size reduction effect on μ-LED performance. EQE of GaN μ-LED as a

Size reduction effect on μ-LED performance. EQE of GaN μ-LED as a

Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting  diode arrays by pixilation of conductive p-GaN

Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

Radar chart of OLED vs. Micro-LED in several aspects.

Radar chart of OLED vs. Micro-LED in several aspects.

Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display  and High-Speed Visible Light Communication

Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display and High-Speed Visible Light Communication

On-chip GaN-based dual-color micro-LED arrays and their application in  visible light communication

On-chip GaN-based dual-color micro-LED arrays and their application in visible light communication

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the  retinal limit

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit

InGaN micro-light-emitting diodes monolithically grown on Si: achieving  ultra-stable operation through polarization and strain engineering

InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering

Simulated color gamut for Device 2 with red/green phosphor in CIE 1931

Simulated color gamut for Device 2 with red/green phosphor in CIE 1931

Characteristics and techniques of GaN-based micro-LEDs for application in  next-generation display

Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display

Monolithic full-color active-matrix micro-LED micro-display using  InGaN/AlGaInP heterogeneous integration

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting  Diodes by a Suspended Structure

Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure

Multiwavelength quantum well nanowire array micro-LED for on-chip optical  communication

Multiwavelength quantum well nanowire array micro-LED for on-chip optical communication